In this work, we have studied the set and the reset transitions in hafnium oxide-based metal-insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a conventional voltage or current signal, we have discharged a capacitor through the devices to perform both transitions. In this way, both transitions are shown to be controllable. An accumulative process is observed if we apply consecutive discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are complete. In addition, it has been shown that faster transitions require larger capacitor voltages.

中文翻译：

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使用电容器放电研究基于HfO ₂的 ReRAM 器件中的设置和复位转换

在这项工作中，我们使用电容器放电研究了基于氧化铪的金属-绝缘体-金属 ReRAM 器件中的设置和复位转换。我们没有施加传统的电压或电流信号，而是通过器件对电容器放电以执行两种转换。通过这种方式，两个转换都显示为可控的。如果我们连续放电，就会观察到一个累积过程，并且当每次放电时增加电容器电压时，两种电阻状态之间的转换就完成了。此外，已经表明更快的转换需要更大的电容器电压。