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Ultrafast non-volatile flash memory based on van der Waals heterostructures
Nature Nanotechnology ( IF 38.3 ) Pub Date : 2021-06-03 , DOI: 10.1038/s41565-021-00921-4
Lan Liu 1, 2 , Chunsen Liu 1, 3 , Lilai Jiang 4 , Jiayi Li 1 , Yi Ding 1 , Shuiyuan Wang 1 , Yu-Gang Jiang 3 , Ya-Bin Sun 4 , Jianlu Wang 2 , Shiyou Chen 1 , David Wei Zhang 5 , Peng Zhou 1
Affiliation  

Flash memory has become a ubiquitous solid-state memory device widely used in portable digital devices, computers and enterprise applications. The development of the information age has demanded improvements in memory speed and retention performance. Here we demonstrate an ultrafast non-volatile flash memory based on MoS2/hBN/multilayer graphene van der Waals heterostructures, which achieves an ultrafast writing/erasing speed of 20 ns through two-triangle-barrier modified Fowler–Nordheim tunnelling. Using detailed theoretical analysis and experimental verification, we postulate that a suitable barrier height, gate coupling ratio and clean interface are the main reasons for the breakthrough writing/erasing speed of our flash memory devices. Because of its non-volatility this ultrafast flash memory could provide the foundation for the next generation of high-speed non-volatile memory.



中文翻译:

基于范德华异质结构的超快非易失性闪存

闪存已成为一种无处不在的固态存储器件,广泛应用于便携式数字设备、计算机和企业应用中。信息时代的发展要求提高记忆速度和保留性能。在这里,我们展示了一种基于 MoS 2的超快非易失性闪存/hBN/多层石墨烯范德华异质结构,通过双三角势垒改进的 Fowler-Nordheim 隧道效应实现 20 ns 的超快写入/擦除速度。通过详细的理论分析和实验验证,我们假设合适的势垒高度、栅极耦合比和干净的界面是我们闪存器件突破性写入/擦除速度的主要原因。由于其非易失性,这种超快闪存可以为下一代高速非易失性存储器奠定基础。

更新日期:2021-06-03
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