Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as a premiere candidate for replacing conventional six-transistors static random-access memory (6T-SRAM) in processor caches. This paper explores STT-MRAMs based on double-barrier magnetic tunnel junction with two reference layers (DMTJ), while operating at cryogenic temperatures (77K). To deal with large dynamc energy and long latency of write operation, we suggest to significantly relax the non-volatility requirement of DMTJ devices at room temperature by reducing the cross-section area, while maintaining the typical 10-years retention time at the target operating temperature. This leads the cryogenic DMTJ-based STT-MRAM to be more energy-efficient than its 6T-SRAM counterpart under both read and write operations, while exhibiting smaller area footprint.

自旋转移矩磁性随机存取存储器 (STT-MRAM) 被认为是替代处理器高速缓存中传统六晶体管静态随机存取存储器 (6T-SRAM) 的首选候选者。本文探讨了基于具有两个参考层 (DMTJ) 的双势垒磁性隧道结的 STT-MRAM，同时在低温 (77K) 下运行。为了应对大动态能量和写入操作的长延迟，我们建议通过减小横截面积来显着放宽 DMTJ 器件在室温下的非易失性要求，同时在目标操作下保持典型的 10 年保留时间温度。这导致基于低温 DMTJ 的 STT-MRAM 在读取和写入操作下比其 6T-SRAM 对应物更节能，同时表现出更小的占地面积。