Layered tin-based SnS₂, Sn(S_0.5Se_0.5)₂, and SnSe₂ dichalcogenide semiconductors were synthesized using high-energy ball milling. Structural analyses revealed anisotropic nanostructures with the 2H-polytype. The extended milling time produced nanocrystallites due to the high density of defects and texture indexes. A significant microstrain reduction was achieved by replacing the 1d site with heavier chalcogenides. The presence of microstrained nanocrystallites widens and redshifts the A_1g and E_g Raman modes. The redshift effect also occurs when the lattice parameters are increased via doping. The overall exothermic DSC profile exhibited a subtle modification above 450 °C suggestive of SnO₂ nucleation. A composition-dependent exciton redshift in UV–Vis was followed by a reduction in the band gap toward lower averaged ionic radii in the 1d site. Multiple straight-line segments in Tauc plots indicate sub-bands as a result of the multilayered structure.

使用高能球磨法合成了层状锡基 SnS ₂、Sn(S _{0 . 5} Se _0.5 ) ₂和 SnSe ₂二硫属化物半导体。结构分析揭示了具有 2H 多型的各向异性纳米结构。由于高密度的缺陷和织构指数，延长的研磨时间产生了纳米微晶。通过用更重的硫属化物代替 1 d位点，显着减少了微应变。微应变纳米微晶的存在使 A _1g和 E _g变宽和红移拉曼模式。当通过掺杂增加晶格参数时也会发生红移效应。总体放热 DSC 曲线在 450 °C 以上显示出细微的变化，表明 SnO ₂成核。UV-Vis 中的组成依赖激子红移之后，带隙向 1 d位点中较低的平均离子半径减小。由于多层结构，Tauc 图中的多个直线段表示子带。