Abstract

Changes in the state of the surface layer of semi-insulating (111) GaAs in air under the action of white light are studied using surface acoustic waves (SAWs). It is shown that, depending on the light intensity and the SAW power, the reactions of interaction with molecules, atoms, and charged particles of the air are enhanced or weakened. The role of standing acoustic waves arising in the surface layers of gallium arsenide, namely, the concentration of interaction effects in places of maximum illumination as a result of diffraction of light by standing acoustic waves, is considered. The formation of nuclei (Ga + As) in the diffraction spots, covered with layers of compounds with oxygen and carbon, either growing or spreading, is found, and the fact that the formation of an oxide layer leads to a reorientation of the GaAs surface is established.

中文翻译：

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用声表面波研究砷化镓表面层在光作用下的转变

摘要

使用表面声波 (SAW) 研究了在白光作用下空气中半绝缘 (111) GaAs 表面层的状态变化。结果表明，根据光强和声表面波功率，与空气中分子、原子和带电粒子相互作用的反应增强或减弱。考虑了在砷化镓表面层产生的驻声波的作用，即，由于驻声波对光的衍射，相互作用效应集中在最大照明处。发现在衍射斑中形成核 (Ga + As)，覆盖有氧和碳的化合物层，无论是生长还是扩散，而且氧化层的形成导致 GaAs 表面的重新取向成立。