This paper presents a study of the physicochemical and the dielectric characteristics of capacitor structures, with an organosilicate polymer fabricated by initiated chemical vapor deposition as dielectric. The polymer evaluated is the poly(trivinyltrimethylcyclotrisiloxane), and a comparative study on different bottom electrodes was performed. Preliminary results demonstrate that iCVD technique permits the deposition of low roughness, low defect and uniform polymer films, and the dielectric fabricated exhibits a high breakdown field and an original dielectric behaviour, which makes it a prominent candidate for high voltage 3D capacitors.

中文翻译：

---

Poly(V ₃ D ₃ )，一种 iCVD 聚合物，对高压电容器具有良好的介电性能

本文介绍了电容器结构的物理化学和介电特性的研究，使用通过引发化学气相沉积制造的有机硅酸盐聚合物作为电介质。评估的聚合物是聚（三乙烯基三甲基环三硅氧烷），并对不同的底部电极进行了比较研究。初步结果表明，iCVD 技术允许沉积低粗糙度、低缺陷和均匀的聚合物薄膜，并且制造的电介质表现出高击穿场和原始介电行为，这使其成为高压 3D 电容器的重要候选者。