In every new technology, the understanding of its failure mechanism is essential to ensure reliability. In this paper an overview on some state-of-the-art characterization methods of 4H-SiC metal oxide semiconductor field effect transistors (MOSFETs) are presented. Silicon-based devices employ many different tools for the study of failure mechanism, which can be exploited for silicon carbide (SiC) devices. Silicon carbide semiconductor offers very interesting electrical and thermal properties for power electronics application in comparison to Si but exhibits different failure mechanisms that need to be studied. Silicon carbide MOSFETs allow for a better energy conversion efficiency in comparison to silicon-based devices, with potential applications in electric vehicles and microgrids converters. Silicon carbide technology can greatly improve on electrical energy management and so failure mechanism studies will lead to the production of robust and high performance devices.

在每一项新技术中，了解其故障机制对于确保可靠性至关重要。本文概述了 4H-SiC 金属氧化物半导体场效应晶体管 (MOSFET) 的一些最先进的表征方法。硅基器件采用许多不同的工具来研究失效机制，这些工具可用于碳化硅 (SiC) 器件。与 Si 相比，碳化硅半导体为电力电子应用提供了非常有趣的电学和热学特性，但表现出不同的失效机制，需要研究。与硅基器件相比，碳化硅 MOSFET 具有更好的能量转换效率，在电动汽车和微电网转换器中具有潜在应用。