Capacitive Metal-Insulator-Semiconductor structures with graphene as interfacial layer between the HfO₂ dielectric and the top electrode have been fabricated and investigated at device level and at the nanoscale with Conductive Atomic Force Microscope. In particular, their electrical properties and variability have been compared to devices without graphene to evaluate their feasibility as ReRAM devices. At device level, we observe that, when graphene is present as an intercalated layer, several resistive switching cycles can be measured, meanwhile the standard structures without graphene do not show resistive switching behavior. Nanoscale analysis showed that the graphene layer prevents the microstructural irreversible damage of the oxide material during a forming process. Therefore, graphene somehow protects the structure during the CF formation. This protection would explain the observation of RS of the devices with intercalated graphene.

以石墨烯作为 HfO ₂之间的界面层的电容性金属-绝缘体-半导体结构已使用导电原子力显微镜在器件级和纳米级制造和研究了电介质和顶部电极。特别是，将它们的电气特性和可变性与没有石墨烯的设备进行了比较，以评估它们作为 ReRAM 设备的可行性。在器件级别，我们观察到，当石墨烯作为插层存在时，可以测量几个电阻开关周期，同时没有石墨烯的标准结构不显示电阻开关行为。纳米级分析表明，石墨烯层可防止形成过程中氧化物材料的微观结构不可逆损坏。因此，石墨烯在CF形成过程中以某种方式保护结构。这种保护可以解释对插入石墨烯的器件的 RS 的观察。