Solid-State Electronics ( IF 1.7 ) Pub Date : 2021-05-31 , DOI: 10.1016/j.sse.2021.108084 A.S. Konashuk , E.O. Filatova , A.A. Sokolov , V.V. Afanas'ev , M. Houssa , A. Stesmans
Nature of gap states in chalcogenide semiconductors GexSe1-x is studied by combining X-ray photoelectron (XPS) and absorption (NEXAFS) spectroscopy with photoconductivity (PC) and internal photoemission (IPE) measurements at the semiconductor/insulator interface. It is shown that studied GexSe1-x layers are heterogeneous composite-like matrices and the gap states determining electron transport originate from formation of homopolar Ge-Ge bonds. Nanoscale phase separation effect is revealed manifesting in redistribution of GeSe2 and GeSe networks, respectively, with increase of Ge content with predominant contribution of GeSe.
中文翻译:
ovonic 转换 Ge x Se 1-x (0,4 ≤ x ≤ 0,72) 薄膜中的结构和电子重排
通过将 X 射线光电子 (XPS) 和吸收 (NEXAFS) 光谱与半导体/绝缘体界面处的光电导 (PC) 和内部光电发射 (IPE) 测量相结合,研究硫族化物半导体 Ge x Se 1-x 中的间隙态的性质。结果表明,所研究的 Ge x Se 1-x层是异质的类复合基质,决定电子传输的间隙态源于单极 Ge-Ge 键的形成。纳米级相分离效应分别表现为 GeSe 2和 GeSe 网络的重新分布,随着 Ge 含量的增加,GeSe 的贡献占主导地位。