For every semiconducting material, the long-term stability of thin film characteristics is a crucial necessity for device applications. This is particularly true for the p-type semiconductor CuI, where the thin film properties are especially sensitive to environmental influences and motivate the application of capping materials. Utilizing pulsed laser deposition (PLD) and Al₂O₃ cappings, we performed systematic studies on the N₂/O₂ partial pressure during growth and the effect of layer thickness. Our results suggest that oxygen, acting as an acceptor, and its diffusion through Al₂O₃ and CuI dominate the conductivity of PLD grown CuI thin films. The diffusion process of atmospheric oxygen into CuI was traced with ¹⁸O-isotopes. Additionally, the transparency and morphology of CuI films are also affected by the oxygen supply during capping growth. These results challenge the currently accepted idea that intrinsic, and not extrinsic, effects determine the conductivity of CuI thin films.

中文翻译：

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氧是主要的浅受体 inp 型 CuI 的证据

对于每种半导体材料，薄膜特性的长期稳定性对于设备应用而言至关重要。对于p型半导体 CuI尤其如此，其中的薄膜特性对环境影响特别敏感，并推动了封端材料的应用。利用脉冲激光沉积 (PLD) 和 Al ₂ O ₃覆盖层，我们对生长过程中的 N ₂ /O ₂分压和层厚的影响进行了系统研究。我们的结果表明，作为受体的氧及其通过 Al ₂ O _{3 的}扩散和 CuI 主导 PLD 生长的 CuI 薄膜的导电性。大气氧向 CuI 的扩散过程用^{18 个}O 同位素进行追踪。此外，CuI 薄膜的透明度和形态也受到覆盖生长过程中氧气供应的影响。这些结果挑战了当前公认的观点，即内在而非外在效应决定了 CuI 薄膜的导电性。