Advanced heterostructures composed of various materials can induce new physical properties and phenomena among existing materials, representing the essential foundation for modern electronics. Recently, many works have been carried out with novel heterostructures combining three-dimensional (3D) and two-dimensional (2D) materials; however, there is a lack of promising methods to fabricate 3D/2D heterostructures due to the poor interfacial quality and the incompatibility of fabrication processes. To further study the interaction between 3D and 2D materials, the fabrication of 3D/2D heterostructures with high-quality interfaces should be attempted. Here, we show the possibility of fabricating high-quality oxide remote epitaxies through layered materials for the exploration on new functionalities. Brand new heterostructures including numerous 3D oxides and MoS₂ have been demonstrated and investigated. Our study clarifies a remarkable concept to realize precisely controllable 3D/2D/3D heteroepitaxies for the design and development of next-generation smart devices.

中文翻译：

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通过 MoS2 远程生长氧化物异质外延

由各种材料组成的先进异质结构可以在现有材料中产生新的物理特性和现象，是现代电子学的重要基础。近来，已经用新颖的异质结构进行了许多工作，这些异质结构结合了三维（3D）和二维（2D）材料。然而，由于界面质量差和制造工艺不兼容，缺乏有前景的方法来制造 3D/2D 异质结构。为了进一步研究 3D 和 2D 材料之间的相互作用，应该尝试制造具有高质量界面的 3D/2D 异质结构。在这里，我们展示了通过分层材料制造高质量氧化物远程外延的可能性，以探索新功能。₂已被证明和研究。我们的研究阐明了一个非凡的概念，可以为下一代智能设备的设计和开发实现精确可控的 3D/2D/3D 异质外延。