Substitutional doping is a powerful strategy to modulate the properties and functionalities of two-dimensional (2D) materials while control of dopants during the process is still challenging. Recently, we invented a dissolution–precipitation (DP) method to grow 2D materials. Here, we further extend this method by developing a double-faced precursor supply DP growth strategy to substitutionally dope metal atoms into monolayer MoS₂ lattices. In this double-faced precursor supply DP method, the Mo source and dopant source are supplied from the bottom and top surface of the glass substrate, respectively, to separate their diffusion paths. As a result, monolayer MoS₂ incorporated with different concentrations of V atoms were grown by tuning the amount of V precursor, which exhibited different types of electrical transport properties. This new doping method is universal in growing several transition metal atom doped MoS₂, including Re, Fe, and Cr, which will extend the applications of 2D materials.

中文翻译：

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通过双面前驱体供应掺杂单层二硫化钼的溶解-沉淀生长

替代掺杂是一种强大的策略，可以调节二维 (2D) 材料的性质和功能，而在此过程中对掺杂剂的控制仍然具有挑战性。最近，我们发明了一种溶解-沉淀 (DP) 方法来生长二维材料。在这里，我们通过开发双面前体供应 DP 生长策略来进一步扩展这种方法，以将金属原子替代掺杂到单层 MoS ₂晶格中。在这种双面前驱体供应 DP 方法中，钼源和掺杂剂源分别从玻璃基板的底面和顶面提供，以分隔它们的扩散路径。因此，单层 MoS ₂通过调整 V 前驱体的量来生长不同浓度的 V 原子，这表现出不同类型的电传输特性。这种新的掺杂方法在生长几种过渡金属原子掺杂的 MoS _{2 方面}具有普遍性，包括 Re、Fe 和 Cr，这将扩展二维材料的应用。