Gallium oxide (Ga₂O₃) single crystals are an ultrawide bandgap semiconductor with wide industrial applications. Ultra-precision grinding is an essential shaping process in the fabrication of high quality Ga₂O₃ substrates. However, due to the lack of understanding of their removal mechanism, the development of high efficiency and low-damage grinding technology for Ga₂O₃ substrates faces great challenges. In this work, the removal mechanism of (010) β-Ga₂O₃ was systematically investigated by use of single grit grinding and nanoscratching. The results showed that its removal involved both ductile cutting and brittle fracture under conventional grit-grinding conditions. The ductile deformation of β-Ga₂O₃ was dominated by the formation of stacking faults, while in its brittle removal region microcracks were initiated and propagated mainly along the (200) lattice plane. A theoretical force model that reflects the combined effects of ductile and brittle removal was developed to further elucidate the removal mechanism. The calculated force was in good agreement with the experimental results, clearly indicating that the transition of removal modes was affected by the chip cross-sectional area.

氧化镓 (Ga ₂ O ₃ ) 单晶是一种具有广泛工业应用的超宽带隙半导体。超精密研磨是制造高质量 Ga ₂ O ₃衬底的重要成型工艺。然而，由于对其去除机理缺乏了解，Ga ₂ O ₃衬底高效低损伤研磨技术的发展面临巨大挑战。在这项工作中，(010) β -Ga ₂ O ₃的去除机制通过使用单砂磨和纳米划痕系统地进行了研究。结果表明，在常规磨粒磨削条件下，其去除涉及韧性切削和脆性断裂。β- Ga ₂ O ₃的延性变形主要由堆垛层错形成，而在其脆性去除区微裂纹主要沿（200）晶面开始和传播。开发了一个反映韧性和脆性去除联合效应的理论力模型，以进一步阐明去除机制。计算的力与实验结果非常吻合，清楚地表明去除模式的转变受切屑横截面积的影响。