28 nm FD-SOI technology is electrically characterized aiming at cryogenic applications. Electrostatics and transport are evaluated and compared while lowering temperature from 300 K down to 4.2 K. Split CV technique is applied in both long and short channel transistors thanks to multiple parallel structures designed to increase the gate area. FD-SOI versatility is shown over a wide temperature range of operation, as the back gate tuning efficiency is preserved at low temperatures. Insights on back gate bias behavior at room and low temperatures are obtained and the electrostatic coupling between front and back channels can be successfully modelled by using 1D Poisson-Schrödinger calculation from 300 K down to 4.2 K. A generic form of empirical models for the effective mobility is found to be useful for cryogenic operation, since the phonon scattering contribution presents strong temperature dependence. While long channel MOSFETs exhibit strong mobility improvement, short channel transistors show lower mobility gain with temperature reduction.

28 nm FD-SOI 技术具有针对低温应用的电气特性。在将温度从 300 K 降低到 4.2 K 的同时，对静电和传输进行了评估和比较。由于多个并行结构旨在增加栅极面积，因此在长沟道和短沟道晶体管中都应用了分离 CV 技术。由于背栅调谐效率在低温下保持不变，因此 FD-SOI 的多功能性在很宽的工作温度范围内得以体现。通过使用从 300 K 到 4.2 K 的 1D Poisson-Schrödinger 计算，可以获得对室温和低温下背栅偏置行为的洞察，并且可以成功地对前后通道之间的静电耦合进行建模。发现流动性对低温操作很有用，因为声子散射贡献呈现出强烈的温度依赖性。虽然长沟道 MOSFET 表现出很强的迁移率改进，但短沟道晶体管随着温度降低显示出较低的迁移率增益。