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Characterizing and Modeling Nonvolatile Memory Systems
IEEE Micro ( IF 3.6 ) Pub Date : 2021-03-11 , DOI: 10.1109/mm.2021.3065305
Zixuan Wang 1 , Xiao Liu 1 , Jian Yang 2 , Theodore Michailidis 1 , Steven Swanson 1 , Jishen Zhao 1
Affiliation  

Scalable server-grade nonvolatile RAM (NVRAM) DIMMs are commercially available with the release of Intel’s Optane DIMM. Recent studies on Optane DIMM-based systems unveil discrepant performance characteristics, compared with what many researchers thought before the product release. To thoroughly analyze the source of the discrepancy and facilitate real-NVRAM-aware system design, we develop an NVRAM microarchitecture characterization and modeling framework, consisting of a Low-level profilEr for Non-volatile memory Systems (LENS) and a Validated cycle-Accurate NVRAM Simulator (VANS). LENS allows users to comprehensively analyze NVRAM performance attributes and reverse engineer NVRAM microarchitectures. We use LENS to reverse engineer the sophisticated microarchitecture design of Optane DIMM and generate a set of architecture implications of industrial NVRAMs. VANS models Optane DIMM microarchitecture and is validated by comparing with the detailed performance characteristics of Optane DIMM-attached servers. VANS adopts a modular design that can be easily modified to extend to other NVRAM architecture designs.

中文翻译:

表征和建模非易失性存储器系统

随着英特尔傲腾 DIMM 的发布,可扩展的服务器级非易失性 RAM (NVRAM) DIMM 已上市。与许多研究人员在产品发布前的想法相比,最近对基于 Optane DIMM 的系统的研究揭示了不一致的性能特征。为了彻底分析差异的来源并促进真正的 NVRAM 感知系统设计,我们开发了 NVRAM 微体系结构表征和建模框架,包括用于非易失性存储器系统 (LENS) 的低级分析器和经过验证的周期精确NVRAM 模拟器 (VANS)。LENS 允许用户全面分析 NVRAM 性能属性和逆向工程 NVRAM 微架构。我们使用 LENS 对 Optane DIMM 的复杂微架构设计进行逆向工程,并生成一组工业 NVRAM 的架构含义。VANS 对傲腾 DIMM 微架构进行建模,并通过与傲腾 DIMM 连接的服务器的详细性能特征进行比较来验证。VANS 采用模块化设计,可以轻松修改扩展到其他 NVRAM 架构设计。
更新日期:2021-03-11
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