Nanoribbons built on gateless (GL) Ultra-Thin Body and Buried Oxide (UTBB) Back Enhanced SOI (^BESOI) pMOSFET are analyzed as a charge-based (CB) biosensor for different sensing materials and device’s dimensions. Experimental GL UTBB ^BESOI pMOSFET are used as a reference structure for the CB biosensor and the influence of different materials and the device’s dimensions are studied by numerical simulations. CB biosensor presents higher sensitivities in weak inversion and for negative charges in the front gate oxide once that, for negative charges, the conduction at the front interface in ^BESOI pMOSFET is favored. An optimization is performed for negative charges and devices with thicker buried oxide (t_BOX = 50 nm) and silicon channel (t_Si = 20 nm) are more sensitive, improving the ^BESOI biosensor’s sensitivity in 14% in weak inversion. The improvement in strong inversion is higher (38%) but the absolute value is three times lower. The nanoribbon GL ^BESOI pMOSFET showed to be a promising structure for an integrated charged based biosensor, which can be easily fabricated in conjunction with the signal processing circuit.

构建在无栅极 (GL) 超薄体和掩埋氧化物 (UTBB) 背增强 SOI ( ^BE SOI) pMOSFET 上的纳米带被分析为一种基于电荷 (CB) 的生物传感器，适用于不同的传感材料和设备尺寸。实验性 GL UTBB ^BE SOI pMOSFET 用作 CB 生物传感器的参考结构，并通过数值模拟研究了不同材料和器件尺寸的影响。CB 生物传感器在弱反转和前栅氧化物中的负电荷方面表现出更高的灵敏度，一旦对于负电荷，^BE SOI pMOSFET的前界面处的传导是有利的。对负电荷和具有较厚埋层氧化物 (t _BOX = 50 nm) 和硅通道 (t _Si  = 20 nm) 更灵敏，在弱反转中将^BE SOI 生物传感器的灵敏度提高了14%。强反转的改善更高（38%），但绝对值低三倍。纳米带 GL ^BE SOI pMOSFET 被证明是一种很有前途的集成带电生物传感器结构，可以与信号处理电路一起轻松制造。