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Doping effect on nanoscopic and macroscopic electrical properties of Barium Zirconate Titanate thin films
Spectroscopy Letters ( IF 1.7 ) Pub Date : 2021-05-27 , DOI: 10.1080/00387010.2021.1928223
A. Tachafine 1 , D. Fasquelle 1 , R. Desfeux 2 , A. Ferri 2 , A. Da Costa 2 , J.-C. Carru 1 , A. Outzourhit 3
Affiliation  

Abstract

Lead-free Barium Zirconate Titanate thin films synthesized by sol-gel process were deposited on platinized silicon substrates. Atomic and piezoresponse force microscopies analysis have revealed low values for the surface roughness and local piezoelectric loops, respectively. Nanoscopic piezoelectric and ferroelectric properties decrease with zirconium content increasing. Dielectric measurements were made up to 1 MHz at room temperature. The highest dielectric permittivity and tunability are obtained for 10% of zirconium. Dielectric loss tangent decreases with frequency, zirconium content and electric field increasing. Thin films with 20% of zirconium could be particularly interesting for electronic applications.



中文翻译:

掺杂对锆钛酸钡薄膜纳米和宏观电学性能的影响

摘要

通过溶胶-凝胶工艺合成的无铅锆钛酸钡薄膜沉积在镀铂的硅基板上。原子和压电响应力显微镜分析分别揭示了表面粗糙度和局部压电回路的低值。纳米级压电和铁电性能随着锆含量的增加而降低。在室温下进行高达 1 MHz 的介电测量。10% 的锆可获得最高的介电常数和可调性。介电损耗角正切随着频率、锆含量和电场的增加而减小。含有 20% 锆的薄膜对于电子应用可能特别有趣。

更新日期:2021-05-27
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