Transition metal (TM)-mixed gallium oxide (Ga₂O₃) ceramic compounds have potential applications in optical, optoelectronic, and photovoltaic devices. Herein, we report on the salient electronic structures and chemical properties of a series of such compounds, with a view to optimizing performance. The TM-mixed Ga₂O₃ (Ga_2-xM_xO₃; TM-GO; 0.0≤x≤0.3, M=Fe, Ti, W) polycrystalline compounds were synthesized by a conventional, high-temperature solid-state reaction method. The effects of Fe-, Ti-, and W-doping on the electronic structures of the TM-GO compounds have been studied. The chemical states of Fe, Ti, and W ions in the TM-GO compounds vary as a function of TM concentration. The electronic structures and chemical states of the respective ions are greatly modified when Fe, Ti, or W ions are mixed in Ga₂O₃. For Fe and W, mixed chemical states (Fe²⁺/Fe³⁺, W⁴⁺/W⁶⁺) are evident in single-phase TM-GO compounds for lower x. On the contrary, Ti ions are invariably in their highest oxidation state (Ti⁴⁺) for all x in Ti-mixed-Ga₂O₃ compounds. Irrespective of the TM dopant, Ga ions exist in their highest oxidation state (Ga³⁺). The fundamental scientific understanding of the electronic properties, and tunability thereof, of TM-GO compounds presented in this detailed study should be useful when considering them for application in electronic, optoelectronic, or energy devices, or related technological fields.

过渡金属（TM）混合的氧化镓（Ga ₂ O ₃）陶瓷化合物在光学，光电和光伏设备中具有潜在的应用。在本文中，我们报告了一系列此类化合物的显着电子结构和化学性质，以优化性能。的TM-混合镓₂ ö ₃（GA _{2- X}中号_X ö ₃ ; TM-GO;0.0≤ X≤0.3，M ＝ Fe，Ti，W）多晶化合物是通过常规的高温固态反应方法合成的。研究了Fe，Ti和W掺杂对TM-GO化合物电子结构的影响。TM-GO化合物中的Fe，Ti和W离子的化学状态随TM浓度的变化而变化。当Fe，Ti或W离子混入Ga ₂ O _3中时，相应离子的电子结构和化学态会大大改变。对于Fe和W，x较低时，在单相TM-GO化合物中明显存在混合化学态（Fe ²⁺ / Fe ³⁺，W ⁴⁺ / W ⁶⁺）。相反，Ti离子始终处于最高氧化态（Ti对于Ti混合Ga ₂ O ₃化合物中的所有x均为⁴⁺）。不管TM掺杂剂如何，Ga离子都以其最高的氧化态（Ga ³⁺）存在。在考虑将它们用于电子，光电或能源设备或相关技术领域时，对这项详细研究中呈现的TM-GO化合物的电子性质及其可调谐性有基本的科学了解。