A bipolar resistance switching memory effect is observed in the Ta/BiFeO₃/carbon/BaTiO₃/Si structure. The resistance switching (RS) behavior can be modulated by an optical signal. The HRS/LRS resistance ratio and threshold voltage change remarkably under white-light irradiation. The trap-based charges in the Schottky-like depletion layers excited by the white light are responsible for the white-light controlled RS memory behaviors. This research is useful in exploring multi-functional materials and applications in optical-controlled nonvolatile memory devices.

中文翻译：

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Ta / BiFeO3 / Carbon / BaTiO3 / Si器件中的可见光调制电阻切换记忆行为

在Ta / BiFeO ₃ /碳/ BaTiO ₃ / Si结构中观察到双极电阻切换记忆效应。电阻切换（RS）行为可以通过光信号进行调制。在白光照射下，HRS / LRS电阻比和阈值电压显着变化。白光激发的类肖特基耗尽层中基于陷阱的电荷负责白光控制的RS存储行为。这项研究对于探索多功能材料及其在光控非易失性存储设备中的应用非常有用。