当前位置: X-MOL 学术Appl. Microsc. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications
Applied Microscopy Pub Date : 2021-05-26 , DOI: 10.1186/s42649-021-00056-9
Young-Min Kim 1, 2 , Jihye Lee 1, 2 , Deok-Jin Jeon 1, 2 , Si-Eun Oh 3 , Jong-Souk Yeo 1, 2
Affiliation  

Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.

中文翻译:

基于先进原子力显微镜的技术,用于新兴神经形态学应用的开关设备的纳米级表征

神经形态系统需要具有高密度存储和选择器设备的集成结构,以避免相邻存储单元之间的干扰和识别错误。为了提高选择器设备的性能,重要的是要了解开关过程的特性。由于开关周期的变化发生在局部纳米级区域,因此需要一种高分辨率分析方法来研究这种现象。原子力显微镜(AFM)用于分析局部变化,因为它提供了具有高分辨率功能的纳米级检测。这篇综述介绍了各种类型的原子力显微镜,例如导电原子力显微镜(C-AFM),静电力显微镜(EFM)和开尔文探针力显微镜(KPFM),以研究开关行为。
更新日期:2021-05-26
down
wechat
bug