Semiconductor-based magnetoresistance (MR) device has many advantages such as high MR ratio at low switching magnetic field, but electron spins were ignored completely in previous researches. Electron spins should impact on performance of semiconductor-based MR device, as electron spins interact with magnetic fields. By considering a semiconductor microstructure constructed on GaAs/Al_xGa_1-xAs heterostructure by patterning two asymmetric ferromagnetic (FM) stripes, we theoretically explore effect of electron spins on semiconductor-based MR device. An interesting spin splitting effect is found in semiconductor-based MR device. Both magnitude and sign of spin splitting effect can be modified by applying a negative voltage. These findings may be helpful for designing semiconductor-based MR devices.

基于半导体的磁阻 (MR) 器件具有许多优点，例如在低开关磁场下具有高 MR 比，但在以前的研究中完全忽略了电子自旋。由于电子自旋与磁场相互作用，因此电子自旋会影响基于半导体的 MR 设备的性能。通过考虑构建在 GaAs/Al _x Ga _1-x上的半导体微结构作为通过图案化两个不对称铁磁 (FM) 条纹的异质结构，我们从理论上探索了电子自旋对基于半导体的 MR 器件的影响。在基于半导体的 MR 器件中发现了一种有趣的自旋分裂效应。自旋分裂效应的大小和符号都可以通过施加负电压来修改。这些发现可能有助于设计基于半导体的 MR 设备。