We have investigated the carrier transport mechanisms of Ag/ITO/Ni_xO/n-Si/LiF_x/Al carrier-selective contact (CSC) silicon solar cells without and with chemically grown SiO_x passivation interlayer. The carrier transport is dominated by thermionic (Schottky) emission and tunnelling at the high- (>0.4 V) and low-forward (<0.4 V) bias voltage regions, respectively, in the cell with SiO_x interlayer. Without intentionally grown SiO_x layer, the carrier transport is dominated by the recombination through interface/surface defect states, which is inferred from the smaller activation energy and strong temperature-dependent ideality factors in >0.4 V forward voltage bias region. The C–V analysis is also confirmed the inability to hold the excess photo-generated charge carriers because of poor interface quality of the cell without SiO_x than the cell with SiO_x. The Ni_xO/c-Si junction with the SiO_x is resulted in higher built-in voltage and better open-circuit voltage representing better interface passivation quality with fewer interface/surface defect states.

我们研究了没有和有化学生长的 SiO _x钝化夹层的 Ag/ITO/Ni _x O/n-Si/LiF _x /Al 载流子选择性接触 (CSC) 硅太阳能电池的载流子传输机制。在具有 SiO _x夹层的电池中，载流子传输分别由高（> 0.4 V）和低正向（<0.4 V）偏置电压区域的热离子（肖特基）发射和隧穿控制。没有故意生长的 SiO _x层，载流子传输由通过界面/表面缺陷状态的复合主导，这是从> 0.4 V正向偏压区域中较小的活化能和强烈的温度依赖性理想因子推断出来的。C-V 分析也证实了无法保持多余的光生电荷载流子，因为没有 SiO _x的电池的界面质量比有 SiO _x的电池差。Ni _x O/c-Si 结与 SiO _x导致更高的内置电压和更好的开路电压，代表更好的界面钝化质量和更少的界面/表面缺陷状态。