International Technology Roadmap for Semiconductors (ITRS) is referred to as one of the most successful roadmapping attempts in high-tech industries. ITRS constantly gave orientation to industries (device/equipment/materials), academia, and governments for continuing miniaturization. The 2000s, the period of utmost attention to ITRS, is also the period of gradual “breakdown” of Dennard's Scaling Law which stipulates the “technological merits” attained by miniaturization of Si-CMOS semiconductors: 1) shrink in chip size; 2) lowered power consumption, and 3) boosted computation speed, simultaneously. The author discusses that ITRS of 2000s had worked for “recovering” the “breakdown” of the Law and that it is attributed to the highly structured nature of Si-CMOS semiconductor technologies in a frame of “(manufacturing) process–device structure–function.” Then, he evaluates the validity of the hypothesis by analyzing wide range of technologies newly introduced in 2000s, namely 1) variety of supplementary methods for “prolonging” the life of Argon Fluoride Laser lithography; 2) high-k dielectric membranes and metal gate for reducing gate-leak current; and 3) low-k dielectric membranes and strained-silicon transistors to boost computation speed. Thus, the author concludes that 1) ITRS at least functioned to let the consensus (among early adopters) be “established” in wide range of research community; 2) under the “gradual breakdown” of Dennard's Scaling Law in 2000s, ITRS worked to keep the Si-CMOS semiconductor's “killing-three-birds-with-one-stone” nature; and 3) the success of ITRS in 2000s is attributed to the structural frame of Si-CMOS semiconductor technologies characterized as “fixed-in-total and disruptive-in-parts.”

中文翻译：

---

ITRS为什么和如何恢复2000年代“缩放定律”的崩溃-Si-CMOS半导体技术的结构框架分析

国际半导体技术路线图（ITRS）被称为高科技行业最成功的路线图尝试之一。ITRS不断为行业（设备/设备/材料），学术界和政府提供定位，以实现持续小型化。2000年代是ITRS最为关注的时期，也是Dennard缩放法逐渐“崩溃”的时期，其中规定了通过Si-CMOS半导体小型化获得的“技术优点”：1）缩小芯片尺寸； 2）缩小芯片尺寸。2）降低功耗，3）同时提高计算速度。作者讨论了2000年代的ITRS旨在“恢复”法律的“崩溃”，并且归因于Si-CMOS半导体技术的高度结构化性质，其框架是“（制造）过程-器件结构-功能”。 。” 然后，他通过分析2000年代新引入的各种技术来评估该假设的有效性，即：1）各种“延长”氟化氩激光光刻技术寿命的补充方法；2）高k介电膜和金属栅极，以减少栅极泄漏电流；3）低k介电膜和应变硅晶体管，以提高计算速度。因此，作者得出以下结论：1）ITRS至少起到了在广泛的研究界“建立”共识（在早期采用者中）的作用；2）在2000年代丹纳德缩放比例法的“逐步崩溃”下，ITRS致力于保持Si-CMOS半导体的“三鸟一石杀人”性质；（3）ITRS在2000年代的成功归功于Si-CMOS半导体技术的结构框架，其特征是“整体固定和零件破坏性”。