当前位置: X-MOL 学术IEEE Trans. Elect. Dev. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2021-05-03 , DOI: 10.1109/ted.2021.3074103
K. Nishioka , S. Miura , H. Honjo , H. Inoue , T. Watanabe , T. Nasuno , H. Naganuma , T. V. A. Nguyen , Y. Noguchi , M. Yasuhira , S. Ikeda , T. Endoh

We successfully developed 25-nm quad CoFeB/MgO-interfaces perpendicular magnetic tunnel junction (quad-MTJ) with enough thermal stability. To fabricate the quad-MTJ, a physical vapor deposition (PVD) process for depositing novel free layer and low resistance-area ( RA ) product MgO layer and low-damage fabrication processes were developed. The developed quad-MTJ technology and advanced process bring better tunnel magneto resistance (TMR) ratio and RA to quad-MTJ than those of double-interface MTJ (double-MTJ), even though quad-MTJ has an additional MgO layer. Scaling down the MTJ size to 25 nm, we demonstrated the advantages of quad-MTJ compared with double-MTJ as follows: 1) two times larger thermal stability factor ( $\Delta $ ), which results in over ten years retention; 2) superiority of large $\Delta $ in the measuring temperature range up to 200 °C; 3) ~1.5 times higher write efficiency; 4) lower write current at short write pulse regions at less than 100 ns; and e) excellent endurance of over 10 11 thanks to higher write efficiency, which results from the reduced voltage owing to low RA and the low damage integration process technology. As a result, the developed quad-MTJ technologies will open the way for the realization of high-density STT-MRAM with low power, high speed, high reliability, and excellent scalability down to $2\times $ nm node.

中文翻译:

具有低电阻面积乘积MgO和高可靠性STT-MRAM保留十年的25nm四接口p-MTJ器件的首个演示

我们成功开发了具有足够热稳定性的25 nm正交CoFeB / MgO接口垂直磁性隧道结(quad-MTJ)。为了制造四方MTJ,需要进行物理气相沉积(PVD)工艺来沉积新颖的自由层和低电阻区域( RA )开发了产品MgO层和低损伤的制造工艺。发达的Quad-MTJ技术和先进的工艺带来了更好的隧道磁致电阻(TMR)比和RA尽管Quad-MTJ具有附加的MgO层,但与双接口MTJ(double-MTJ)相比,四线MTJ的性能更高。将MTJ尺寸缩小至25 nm,我们展示了Quad-MTJ与double-MTJ相比的优势,具体如下:1)热稳定性系数大两倍( $ \ Delta $ ),可保留超过十年;2)优势大 $ \ Delta $ 在高达200°C的测量温度范围内;3)约1.5倍的写入效率;4)在小于100 ns的短写入脉冲区域降低写入电流;e)较高的写入效率,可提供超过10 11的出色耐久性 ,这是由于低电压导致电压降低所致RA以及低损伤整合工艺技术。结果,已开发的Quad-MTJ技术将为实现低功耗,高速度,高可靠性以及出色的可扩展性的高密度STT-MRAM开辟道路。 $ 2 \次$ nm节点。
更新日期:2021-05-25
down
wechat
bug