This article presents an analytical method for parameter extraction in oxide semiconductor field-effect transistors (OS FETs), including threshold voltage ( ${V}_{\text {T}}$ ), effective channel length ( ${L}_{\text {eff}}$ ), source–drain series resistance ( ${R}_{\text {SD}}$ ), and intrinsic effective mobility ( $\mu _{\text {int}}$ ). An analytical expression of effective mobility ( $\mu _{\text {eff}}$ ) is implemented with the consideration of percolation conduction and ${R}_{\text {SD}}$ effects. This method relies on the concept of ${Y}$ -function method and the channel length dependent measurement. The extraction results are compared to those from the combination of transfer length method (TLM). It has been shown that a better accuracy of the extracted parameters is achieved with the proposed method. Furthermore, transfer characteristics are resimulated based on the extracted parameters, in which a good match between measurement and simulation is obtained.

中文翻译：

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氧化物半导体场效应晶体管参数提取的一种解析方法

本文介绍了一种用于氧化物半导体场效应晶体管（OS FET）中参数提取的分析方法，包括阈值电压（ $ {V} _ {\ text {T}} $ ），有效频道长度（ $ {L} _ {\ text {eff}} $ ），源极-漏极串联电阻（ $ {R} _ {\ text {SD}} $ ），以及内在的有效流动性（ $ \ mu _ {\ text {int}} $ ）。有效流动性的分析表达式（ $ \ mu _ {\ text {eff}} $ ）是在考虑渗流传导的情况下实现的 $ {R} _ {\ text {SD}} $ 效果。这种方法依赖于 $ {Y} $ 功能方法和通道长度相关的测量。将提取结果与传输长度方法（TLM）组合的结果进行比较。已经表明，所提出的方法实现了所提取的参数的更好的准确性。此外，基于提取的参数对传输特性进行了重新仿真，从而获得了测量和仿真之间的良好匹配。