The hydrogen behavior in the amorphous In–Ga–Zn–O (a-IGZO) thin-film layer according to the device process with top gate structure was quantitatively investigated. The hydrogen quantities in the a-IGZO thin-film layer with gate insulator (w/GI) and after GI dry-etching were increased by $3.40\times 10^{20}$ and $2.50\times 10^{\vphantom {D^{a}}20}$ /cm ³ , respectively, in comparison with without GI (w/o GI). In addition, the calculated carrier concentration of the a-IGZO thin-film layer by band alignment increased by $1.60\times 10^{18}$ and $7.38\times 10^{17}/cm^{3}$ , respectively, compared with w/o GI. Due to the plasma effect, the hydrogen quantity and the calculated carrier concentration in the a-IGZO thin-film layer after GI dry-etching slightly decreased from w/GI by $0.90 \times 10^{20}$ and $8.62 \times 10^{17}$ /cm ³ , respectively. The increased hydrogen quantity in the a-IGZO thin-film layer can contribute to increase in carrier concentration by providing free electrons through the hydrogen reaction with oxygen ions or transition of hydrogen state. Here, we attempted to correlate the hydrogen effect to the increase of the carrier concentration through various physical analysis.

中文翻译：

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栅绝缘子沉积和栅绝缘子刻蚀过程中顶栅非晶In-Ga-Zn-O器件制造过程中的氢行为

根据具有顶栅结构的器件工艺，对非晶In-Ga-Zn-O（a-IGZO）薄膜层中的氢行为进行了定量研究。带栅极绝缘体的a-IGZO薄膜层中的氢量（w / GI）和GI干蚀刻后的氢量增加了 $ 3.40 \次10 ^ {20} $ 和 $ 2.50 \次10 ^ {\ vphantom {D ^ {a}} 20} $ / cm ³ ，与不使用GI（不使用GI）相比。另外，通过能带取向计算的a-IGZO薄膜层的载流子浓度增加了 $ 1.60 \次10 ^ {18} $ 和 $ 7.38 \次10 ^ {17} / cm ^ {3} $ 分别与不使用GI进行比较。由于等离子体效应，在进行GI干法蚀刻后，a-IGZO薄膜层中的氢量和计算出的载流子浓度比w / GI略有降低。 $ 0.90 \次10 ^ {20} $ 和 $ 8.62 \次10 ^ {17} $ / cm ³ 。通过与氧离子的氢反应或氢态的转变，通过提供自由电子，a-IGZO薄膜层中增加的氢量可有助于增加载流子浓度。在这里，我们试图通过各种物理分析将氢效应与载流子浓度的增加联系起来。