Total-ionizing-dose (TID) radiation response on unclosed edge termination is investigated for high voltage silicon-on-insulator (SOI) laterally diffused metal–oxide–semiconductor (LDMOS) in this article. Radiation-induced dual-channel leakage current model is proposed to reveal the mechanism of leakage current generation at OFF-state. Radiation causes a mass of positive oxide trapped charges generated in field oxide (FOX) layer and buried oxide layer. Owing to the P-SOI layer with significantly low doping concentration, two inversion channels are formed at the surface and bottom in the edge termination region, which provides parallel conduction paths. Electrons from the source N+ are pulled down and flow along the bottom channel while punchthrough occurring. The radiation-induced leakage current could be suppressed by thinning FOX layer, increasing the doping concentration of the P-SOI layer, and thickening the SOI layer.

中文翻译：

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高压SOI LDMOS的未封闭边缘端接处总电离辐射引起的双通道泄漏电流

本文研究了高压绝缘子上硅（SOI）横向扩散的金属氧化物半导体（LDMOS）在未封闭边缘终止处的总电离剂量（TID）辐射响应。提出了辐射诱导的双通道泄漏电流模型，以揭示在关闭状态下泄漏电流产生的机理。辐射会导致在场氧化物（FOX）层和掩埋氧化物层中产生大量正氧化物俘获的电荷。由于掺杂浓度非常低的P-SOI层，在边缘终止区域的表面和底部形成了两个反向沟道，这两个反向沟道提供了平行的导电路径。来自源极N +的电子被下拉并沿着底部通道流动，同时发生穿通现象。可以通过减薄FOX层来抑制辐射引起的泄漏电流，