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Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal– Oxide–Semiconductor Structure
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2021-05-05 , DOI: 10.1109/ted.2021.3075168
Zhiyu Guo , Jingmin Wu , Run Tian , Fengxuan Wang , Pengfei Xu , Xiang Yang , Zhongchao Fan , Fuhua Yang , Zhi He

In this work, a method was investigated to extract trench sidewall and trench bottom capacitances of a SiC trench metal–oxide–semiconductor (MOS) structure. Five groups of 4H-SiC trench MOS capacitors were designed and fabricated, with various trench bottom widths and trench mesa widths. High-frequency capacitance–voltage (HFCV) measurements at 100 kHz were performed on these trench MOS structures. The relationships between trench MOS capacitances and the widths of trench bottom as well as trench mesa were studied. As expected, under the same bias voltage, the measured trench MOS capacitances were proportional to the trench bottom widths and trench mesa widths. Based on this, the contributions of capacitances from the bottom, mesa, and sidewall of trench in trench MOS structure were studied systematically. The oxide thicknesses at different locations in trench were extracted. The ${C}$ ${V}$ characteristics of the MOS capacitors from trench sidewall and trench bottom could also be deduced, from which the flat-band voltage and the charges in oxide of these two MOS capacitors could be subsequently calculated and analyzed. This method provides a convenient and precise technology to monitor process control in SiC trench MOSFETs manufacturing.

中文翻译:

n型4H-SiC沟槽金属-氧化物-半导体结构中沟槽侧壁电容的提取

在这项工作中,研究了一种提取SiC沟槽金属-氧化物-半导体(MOS)结构的沟槽侧壁和沟槽底部电容的方法。设计和制造了五组4H-SiC沟槽MOS电容器,具有不同的沟槽底部宽度和沟槽台面宽度。在这些沟槽MOS结构上执行了100 kHz的高频电容-电压(HFCV)测量。研究了沟槽MOS电容与沟槽底部宽度以及沟槽台面之间的关系。不出所料,在相同的偏置电压下,测得的沟槽MOS电容与沟槽底部宽度和沟槽台面宽度成比例。在此基础上,系统地研究了沟槽MOS结构中沟槽底部,台面和侧壁电容的贡献。提取沟槽中不同位置的氧化物厚度。这 $ {C} $ $ {V} $ 还可以推导出来自沟槽侧壁和沟槽底部的MOS电容器的特性,由此可以随后计算和分析这两个MOS电容器的平带电压和氧化物电荷。此方法提供了一种方便且精确的技术来监视SiC沟槽MOSFET制造中的过程控制。
更新日期:2021-05-25
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