This article reports the influence of both contact condition and island edge on the electrical characteristics of the pseudo-metal-oxide-semiconductor-field-effect-transistor (pseudo-MOSFET) method. Our measurements reveal the sensitivity of the classical pseudo-MOSFET method on contact condition. We clarify that the presence of the OFF-state (an electrical characteristic) is controlled by modulating the surface condition of silicon on insulator wafer via chemical treatment. The Kelvin pseudo-MOSFET method reveals that surface condition, which impacts the barrier height for each carrier, can determine the electrical characteristics and the necessity to consider the influence of metal-semiconductor contact even if the probes are loaded at high pressure. The influence of the island edge is also analyzed. We clarify the necessity of using the dual-configuration Kelvin pseudo-MOSFET method to precisely offset the influence of the island edge. The influence of how the metal probes are placed on the specimen is discussed. To extract electrical parameters such as channel resistance and carrier mobility, we reveal that the probes must be placed symmetrically with respect to the specimen.

中文翻译：

---

接触条件和孤岛边缘对双配置开尔文伪MOSFET方法的详细影响

本文报道了接触条件和岛边缘对伪金属氧化物半导体场效应晶体管（pseudo-MOSFET）方法的电学特性的影响。我们的测量结果揭示了传统伪MOSFET方法在接触条件下的灵敏度。我们阐明，通过化学处理调节绝缘体晶片上硅的表面状态，可以控制OFF状态（电特性）的存在。开尔文（Kelvin）伪MOSFET方法揭示了影响每个载流子势垒高度的表面状况可以确定电气特性，并且即使探针是在高压下加载，也必须考虑金属-半导体接触的影响。还分析了岛边缘的影响。我们阐明了使用双配置开尔文伪MOSFET方法来精确抵消岛边缘影响的必要性。讨论了如何将金属探针放置在样本上的影响。要提取电参数，例如通道电阻和载流子迁移率，我们发现探针必须相对于样品对称放置。