The fabrication of resist patterns using UV nanoimprinting is required on consideration of the reduction of the use of hydrocarbons along recent amendments for environmental sustainability. In this study, we investigated the generation of resist pattern defects through UV nanoimprinting in a readily condensable trans-1,3,3,3-tetrafluoropropene (TFP) gas with a low global warming potential for elimination of nonfill defects arising from a bubble trap and subsequent sequential infiltration synthesis (SIS) to result in a vapor phase organic-inorganic hybridization for dry etching durability. A bisphenol A-based UV-curable imprint resin enabled the nanostructure fabrication of resist patterns without any nonfill defects in TFP; however, SIS consisting of subsequent mutual doses of trimethylaluminum and water caused a resist pattern collapse of 100-nm-height patterns with linewidths of <60 nm. A crosslinker with six acrylate moieties was selected based on its low TFP absorption. The crosslinker-containing imprint resin decreased the resist pattern collapse during SIS. Nanoindentation measurements suggest that the resist patterns made using the crosslinker-containing imprint resin were strengthened at 100 °C to carry out an SIS.

中文翻译：

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紫外纳米压印中涉及交联剂与三甲基铝的连续渗透合成，通过交联剂抑制抗蚀剂图案塌陷

考虑到随着最近对环境可持续性的修订，减少了碳氢化合物的使用，因此需要使用UV纳米压印法制造抗蚀剂图形。在这项研究中，我们调查了抗蚀剂图案缺陷的产生通过UV纳米压印在易冷凝反具有较低全球变暖潜能的-1,3,3,3-四氟丙烯（TFP）气体可消除气泡捕获和随后的顺序渗透合成（SIS）引起的非填充缺陷，从而实现干法的气相有机-无机杂化蚀刻耐久性。一种基于双酚A的可紫外固化的压印树脂，能够在抗蚀剂图案的纳米结构中制造，而TFP中没有任何非填充缺陷。然而，由随后的三甲基铝和水的共同剂量组成的SIS导致抗蚀剂图形崩溃，其线宽<60 nm的高度为100 nm。基于其低TFP吸收，选择了具有六个丙烯酸酯部分的交联剂。含交联剂的压印树脂减少了SIS期间抗蚀剂图案的崩塌。