For the first time, the low-pressure cold spray (LPCS) process was used to manufacture gallium nitride (GaN) films to enhance its photocatalytic properties and decrease its manufacturing cost. The deposition behavior of the GaN powder on stainless steel substrates was investigated. Several specimens, with sparsely deposited agglomerated GaN particles, were prepared under different spray conditions. Quantitative analysis of the evolution of the coverage area, deposited particle count, and average sectional area shows that, upon impact, agglomerated GaN particles disintegrate, leading to large deposition of small particles. By analyzing the cross-sectional area of the deposited particle, no discernible permanent deformation of the substrate was observed. In addition, x-ray diffraction analysis of the coatings and powder indicated that no phase transformation occurred during the process. Based on Williamson–Hall analysis, the broader peaks of the coatings were mainly attributed to the distortions in the GaN lattice rather than changes in the crystallite size. At 400°C and 0.6 MPa, the deposition efficiency reached 5.3%, and the photocatalytic activities of the coating were about 33% (+9% compared to the powder). It is attributed to the higher specific surface area and roughness that the coatings exhibit after the breakage of the particles during the cold spray.

第一次，低压冷喷涂（LPCS）工艺用于制造氮化镓（GaN）薄膜，以增强其光催化性能并降低其制造成本。研究了GaN粉末在不锈钢基板上的沉积行为。在不同的喷涂条件下制备了几个样品，这些样品具有稀疏沉积的团聚GaN颗粒。对覆盖面积，沉积的颗粒数和平均截面面积的演变的定量分析表明，撞击后，团聚的GaN颗粒会崩解，从而导致小颗粒的大量沉积。通过分析沉积颗粒的横截面积，未观察到基材的可辨别的永久变形。此外，涂层和粉末的X射线衍射分析表明，在该过程中没有相变发生。根据Williamson-Hall分析，涂层的较宽峰主要归因于GaN晶格的畸变，而不是微晶尺寸的变化。在400℃和0.6MPa下，沉积效率达到5.3％，涂层的光催化活性为约33％（与粉末相比为+ 9％）。这归因于在冷喷涂期间颗粒破裂后涂层表现出的更高的比表面积和粗糙度。沉积效率达到5.3％，涂层的光催化活性约为33％（比粉末高9％）。这归因于在冷喷涂期间颗粒破裂后涂层表现出的更高的比表面积和粗糙度。沉积效率达到5.3％，涂层的光催化活性约为33％（比粉末高9％）。这归因于在冷喷涂期间颗粒破裂后涂层表现出的更高的比表面积和粗糙度。