In this article, we present Tool suIte for rAdiation Reliability Assessment (TIARA), an industrial version of a Monte Carlo single-event simulation platform, enabling fast and accurate soft error rate (SER) estimations. This tool is capable of simulating logic cells manufactured in several technologies such as fully depleted silicon on insulator (FD-SOI), FinFET, and planar bulk CMOS. Moreover, TIARA is able to handle many different types of radiations including by-products of neutron or proton spallation, heavy ions and alpha particles, representative of terrestrial and space environments. Three use cases are shown in this article to illustrate TIARA capabilities. The first one compares the error rate in Geostationary Earth Orbit (GEO) orbit of all flip-flop variants from a 28-nm FD-SOI library. Second one evaluates multiple-cell upsets as a function of simulated array size for static random access memory (SRAM) cells manufactured in a 40-nm bulk technology. The last one shows alpha and neutron SER results for SRAM designed in a bulk-FinFET technology.

中文翻译：

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TIARA：用于平面批量，FD-SOI和FinFET的蒙特卡洛单事件仿真的工业平台

在本文中，我们介绍了用于可靠性可靠性评估的工具套件（TIARA），这是蒙特卡洛单事件模拟平台的工业版本，可实现快速准确的软错误率（SER）估计。该工具能够模拟采用多种技术制造的逻辑单元，例如完全耗尽的绝缘体上硅（FD-SOI），FinFET和平面体CMOS。此外，TIARA能够处理许多不同类型的辐射，包括中子或质子散裂的副产品，重离子和α粒子（代表地面和太空环境）。本文显示了三个用例，以说明TIARA的功能。第一个比较了28纳米FD-SOI库中所有触发器变体的对地静止地球轨道（GEO）轨道中的错误率。第二篇文章评估了40纳米批量技术中制造的静态随机存取存储器（SRAM）单元的多单元不稳定性，该值是模拟阵列大小的函数。最后一个显示了采用体FinFET技术设计的SRAM的α和中子SER结果。