We report on alpha and neutron irradiation of 7.8 $\boldsymbol {\mu }\text{m}$ single-photon avalanche diodes (SPADs) manufactured in 40-nm CMOS. Displacement damage leads to persistent dark count rate hot spots, due to carrier generation centers introduced by radiation. Defects are studied as a function of temperature and electrical stress, with live acquisitions evidencing large amounts of short-term annealing of the damage, and sometimes also random telegraph signal. Average damage factors and defect activation energies are consistent with a large field-enhancement of carrier generation. Since some radiation-induced defects lead to out-of-spec behavior, the implications for the reliability of SPAD-based systems are also discussed, by projecting the associated terrestrial failure rates.

中文翻译：

---

CMOS单光子雪崩二极管的位移损伤特性：α粒子和快速中子测量

我们报告了7.8的α和中子辐照 $ \ boldsymbol {\ mu} \ text {m} $ 采用40 nm CMOS制造的单光子雪崩二极管（SPAD）。由于辐射引入的载流子产生中心，位移损坏导致持续的暗计数率热点。根据温度和电应力对缺陷进行了研究，现场采集表明损坏发生了大量短期退火，有时还会出现随机电报信号。平均损伤因子和缺陷活化能与载流子产生的大场增强一致。由于某些辐射引起的缺陷会导致超标行为，因此，通过预测相关的地面故障率，还将讨论基于SPAD的系统的可靠性。