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Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs
IEEE Transactions on Nuclear Science ( IF 1.8 ) Pub Date : 2021-04-09 , DOI: 10.1109/tns.2021.3072068 M. W. Rony , Isaak K. Samsel , En Xia Zhang , Andrew Sternberg , Kan Li , Mahmud Reaz , Stephanie M. Austin , Michael L. Alles , Dimitri Linten , Jerome Mitard , Robert A. Reed , Daniel M. Fleetwood , Ronald D. Schrimpf
IEEE Transactions on Nuclear Science ( IF 1.8 ) Pub Date : 2021-04-09 , DOI: 10.1109/tns.2021.3072068 M. W. Rony , Isaak K. Samsel , En Xia Zhang , Andrew Sternberg , Kan Li , Mahmud Reaz , Stephanie M. Austin , Michael L. Alles , Dimitri Linten , Jerome Mitard , Robert A. Reed , Daniel M. Fleetwood , Ronald D. Schrimpf
Peak transient currents due to pulsed-laser or heavy-ion irradiation of Ge $p$
MOS FinFETs are nearly independent of gate bias. This is because the prompt photocurrent is due primarily to a transient source–drain shunt. In contrast, long-term diffusion charge collection is strongly gate-bias dependent. This bias dependence results from hole injection from the source in response to the transient increase in electron concentration in the channel. The transients measured at the source terminal change polarity when the strike location moves from the source to the drain, but this effect does not occur for the transients measured at the drain terminal. Charge collection mechanisms are studied using TCAD simulations.
中文翻译:
Ge沟道pMOS FinFET中的单事件感应电荷收集
Ge的脉冲激光或重离子辐照引起的峰值瞬态电流 $ p $
MOS FinFET几乎与栅极偏置无关。这是因为瞬态光电流主要是由于瞬态源漏并联造成的。相反,长期扩散电荷收集强烈依赖于栅极偏置。这种偏倚依赖性是由于响应沟道中电子浓度的瞬时增加而从源极注入空穴而引起的。当走线位置从源极移至漏极时,在源极端子处测得的瞬变会改变极性,但对于在漏极端子处测得的瞬变不会发生这种影响。使用TCAD仿真研究了电荷收集机制。
更新日期:2021-05-22
中文翻译:
Ge沟道pMOS FinFET中的单事件感应电荷收集
Ge的脉冲激光或重离子辐照引起的峰值瞬态电流