This article presents a static random access memory (SRAM)-based flexible radiation monitor. The monitor was fabricated in a 65-nm CMOS technology and it is designed as an application-specific integrated circuit, which comprises 768k bits SRAM cell matrix with individual power supply and a digital control core with a serial peripheral interface (SPI). By adjusting the core voltage of the SRAM matrix, the radiation sensitivity was made flexible. Also, SRAM cells with different threshold voltages were implemented to get further extension on tunable sensitivity range. The monitor has been tested under heavy ions with a linear energy transfer (LET) from 1.5 to 48.5 $\text {MeV}\cdot \text {cm}^{2}$ /mg, high-energy (50–186 MeV) and low-energy (0.7–5 MeV) protons, and 14-MeV and thermal neutrons. An analysis was performed on how single-event upset sensitivity changes while tuning the supply voltage under different radiation environments. The results show that the monitor has the potential for space and facility applications.

中文翻译：

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65 nm CMOS中基于SRAM的辐射监视器的SEU灵敏度研究

本文介绍了一种基于静态随机存取存储器（SRAM）的柔性辐射监视器。该监视器采用65纳米CMOS技术制造，并被设计为专用集成电路，包括具有独立电源的768k位SRAM单元矩阵和具有串行外围接口（SPI）的数字控制核。通过调整SRAM矩阵的核心电压，可以使辐射灵敏度变得灵活。此外，还采用了具有不同阈值电压的SRAM单元，以进一步扩展可调灵敏度范围。该监测仪已经在重离子下进行了测试，线性能量转移（LET）从1.5到48.5 $ \ text {MeV} \ cdot \ text {cm} ^ {2} $ / mg，高能（50–186 MeV）和低能（0.7–5 MeV）质子以及14-MeV和热中子。分析了在不同辐射环境下调节电源电压时单事件翻转灵敏度如何变化。结果表明该监视器具有在空间和设施应用方面的潜力。