A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance $R_{on}$ A reduction and high speed switching due to flat electric field distribution and low gate density by the slit oxide. Therefore, Slit FP power MOSFET achieves better $R_{on}A-R_{on}$ $Q_{sw}$ and $R_{on}A-R_{on}$ $Q_{g}$ tradeoff characteristics compared with conventional FP power MOSFET. TCAD simulation result shows 12% of $R_{on}$ A , 11% of $R_{on}$ $Q_{sw}$ , and 20% of $R_{on}$ $Q_{g}$ can be reduced simultaneously by the Slit FP power MOSFET compared with the conventional FP power MOSFET at the lowest $R_{on}$ A design.

中文翻译：

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狭缝场板功率MOSFET，可改善品质因数

提出了一种新型的低压功率MOSFET，以改善用于降低功耗的品质因数（FOM）。狭缝场板（Slit FP）结构可有效应对导通电阻 $ R_ {on} $ 一种由于平坦的电场分布和狭缝氧化物的低栅极密度，降低了电流并实现了高速开关。因此，狭缝FP功率MOSFET可以达到更好的效果 $ R_ {on} A-R_ {on} $ $ Q_ {sw} $ 和 $ R_ {on} A-R_ {on} $ $ Q_ {g} $ 与常规FP功率MOSFET相比，需要权衡特性。TCAD仿真结果显示了12％的 $ R_ {on} $ 一种 ，占11％ $ R_ {on} $ $ Q_ {sw} $ ，以及20％ $ R_ {on} $ $ Q_ {g} $ 与传统的FP功率MOSFET相比，Slit FP功率MOSFET可同时降低 $ R_ {on} $ 一种 设计。