The results of a study on the electronic states and valence band offset (VBO) in heterostructures of the transition metal oxide LaNiO₃ (LNO)/SrRuO₃ (SRO) grown on (001) SrTiO₃ (STO) substrates are reported. X-ray photoelectron spectroscopy (XPS) data reveal the presence of Ni²⁺ states in LNO layer that can develop a reduced bandwidth of O-2p and Ni-3d. Further analysis of XPS data confirms the presence of a VBO, and the value of VBO is found to be +0.02 eV and –0.38 eV for the bilayers of STO/LaNiO₃/SrRuO₃ (BL-1) and STO/SrRuO₃/LaNiO₃ (BL-2), respectively. Distinct signs of VBO are noticed between the bilayers due to the relative shift of the valence band of the top layer with respect to the bottom layer. Such band shifts can lead to the charge transfer across the (3d−4d) interface, which significantly modifies the global electronic transport and magnetic properties of the bilayers. A detailed discussion on the underlying physical phenomena of electrical transport and magnetic responses triggered by the interface is also incorporated herein.

中文翻译：

---

LaNiO3/SrRuO3 双层电子态的研究：界面感应磁性和电荷转移

报告了在 (001) SrTiO ₃ (STO) 衬底上生长的过渡金属氧化物 LaNiO ₃ (LNO)/SrRuO ₃ (SRO)异质结构中的电子态和价带偏移 (VBO) 的研究结果。X 射线光电子能谱 (XPS) 数据揭示了LNO 层中存在 Ni ²⁺态，这会导致 O-2 p和 Ni-3 d 的带宽降低。XPS 数据的进一步分析证实了 VBO 的存在，发现 STO/LaNiO ₃ /SrRuO ₃ (BL-1) 和 STO/SrRuO ₃ /双层的 VBO 值为 +0.02 eV 和 –0.38 eV氧化镧₃(BL-2)，分别。由于顶层的价带相对于底层的相对位移，在双层之间注意到 VBO 的不同迹象。这种带移可导致电荷跨 (3 d -4 d ) 界面的转移，这显着改变了双层的整体电子传输和磁性。对由界面触发的电传输和磁响应的潜在物理现象的详细讨论也包含在本文中。