In this paper, a novel hybrid-scaling rule for GaN high-electron-mobility transistors (HEMTs) scalable large-signal model with self-heating effect is proposed. Due to the complex parasitic characteristics of large gate-width GaN HEMT devices, nonlinear scaling rules are used to consider the dependence of the extrinsic inductances, extrinsic resistances, and thermal resistance on the gate width. In addition, a drain-source current model and gate capacitance models are proposed to improve the accuracy of traditional Angelov model. A one stage resistor-capacitor network is attached in the current model to characterize self-heating effect. Therefore, a scalable large-signal model based on a hybrid-scaling rule is presented for the first time. Compared with traditional linear scalable model, the proposed model has a good prediction for multi-bias S-parameters and direct current (DC) I-V curves of different size devices, and can also significantly improve the fitting degree of S₂₂ parameter at high frequency. Moreover, the proposed scalable model shows a good prediction of large-signal characteristics for large size GaN HEMT devices.

中文翻译：

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基于混合缩放规则的 GaN 高电子迁移率晶体管具有自热效应的可扩展大信号模型

在本文中，提出了一种用于具有自热效应的 GaN 高电子迁移率晶体管 (HEMT) 可缩放大信号模型的新混合缩放规则。由于大栅极宽度 GaN HEMT 器件的复杂寄生特性，非线性缩放规则用于考虑外在电感、外在电阻和热阻对栅极宽度的依赖性。此外，还提出了漏源电流模型和栅极电容模型，以提高传统Angelov模型的准确性。当前模型中附加了一个一级电阻-电容网络来表征自热效应。因此，首次提出了基于混合缩放规则的可扩展大信号模型。与传统的线性可伸缩模型相比，_22个高频参数。此外，所提出的可扩展模型显示了对大尺寸 GaN HEMT 器件的大信号特性的良好预测。