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Influence of dual Ge/C pre-amorphization implantation on the Ni1−xPtxSi phase nucleation and growth mechanisms
Microelectronic Engineering ( IF 2.3 ) Pub Date : 2021-05-20 , DOI: 10.1016/j.mee.2021.111571
S. Guillemin , P. Gergaud , N. Bernier , L. Lachal , F. Mazen , A. Jannaud , F. Nemouchi , Ph. Rodriguez

The impact of dual Ge/C pre-amorphization implantation (PAI) processes on the Ni0.9Pt0.1(7 nm)/Si system phase sequence has been investigated by advanced X-ray diffraction techniques and transmission electron microscopy (TEM). Using a high carbon implantation dose, it is found that the expected development of Ni-rich phases is not observed: a thick amorphous Ni1−xPtxSi layer developed until Ni0.9Pt0.1 full consumption, followed by the development of a thin crystalline Ni1−xPtxSi layer along the TiN interface. By increasing the temperature further, this last one abruptly thicken, creating the final silicide layer. An alternative model to grain boundary diffusion is discussed, accounting for the final distribution of the foreign species within the silicide layer. The use of Ge in dual Ge/C PAI is proposed to impact the growing mechanisms by alloying to fine-tune the carbon distribution in the substrate sub-surface.



中文翻译:

Ge / C双预非晶化注入对Ni 1− x Pt x Si相成核和生长机理的影响

已经通过先进的X射线衍射技术和透射电子显微镜(TEM)研究了双Ge / C预非晶化注入(PAI)工艺对Ni 0.9 Pt 0.1(7 nm)/ Si系统相序的影响。使用高碳注入剂量,发现未观察到富镍相的预期发展:厚的非晶态Ni 1- x Pt x Si层发展直至Ni 0.9 Pt 0.1完全消耗,随后形成了薄的非晶态镍层。结晶Ni 1- x Pt x沿着TiN界面的Si层。通过进一步提高温度,最后一层突然变厚,形成最终的硅化物层。讨论了晶界扩散的替代模型,该模型考虑了硅化物层内外来物种的最终分布。有人提出在双Ge / C PAI中使用Ge可以通过合金化来微调衬底次表面中碳的分布,从而影响生长机制。

更新日期:2021-05-20
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