The use of GaN photoconductive semiconductor switches (PCSSs) is plugged by the high local electric field at the electrode edges and the low on-state current in the sub-bandgap triggering mode. Therefore, a new high-power semi-insulating GaN PCSS structure, which is a quantum well coupled with a trench PCSS (QWTPCSS), is presented. The trench changes the electric field distribution. In the off state, the maximum electric field of the GaN QWTPCSS is 202.1 kV cm ⁻¹, which is 60.57% lower than the 512.6 kV cm ⁻¹ of the conventional structure. Moreover, the introduced AlGaN layer forms two-dimensional electron gases (2DEGs) in the conduction state; when triggered by a 532 nm laser, such 2DEGs contribute to the on-state current, which increases by 9.37% relative to that of the structure without AlGaN. These results demonstrate the potential of QWTPCSS to achieve high power.

GaN 光电导半导体开关 (PCSS) 的使用被电极边缘的高局部电场和亚带隙触发模式下的低通态电流所堵塞。因此，提出了一种新的高功率半绝缘 GaN PCSS 结构，它是与沟槽 PCSS (QWTPCSS) 耦合的量子阱。沟槽改变电场分布。在关断状态下，GaN QWTPCSS 的最大电场为 202.1 kV cm ^-1，比 512.6 kV cm ^-1低 60.57%的传统结构。此外，引入的AlGaN层在导电状态下形成二维电子气（2DEGs）；当由 532 nm 激光触发时，这种 2DEG 有助于导通电流，与没有 AlGaN 的结构相比，导通电流增加了 9.37%。这些结果证明了 QWTPCSS 实现高功率的潜力。