Highly responsive, flexible aluminum nitride single nanowire ultraviolet photodetector (AlNNW-UVPD) is reported for the first time with the highest responsivity of 1197.5 mA / W along with an excellent external quantum efficiency of 584% under 254-nm UV light exposure at 30 V bias. A flexible nanoscale photodetector on a very small scale was fabricated through a scalable and highly cost-efficient hot-contact method. With this method, we were able to achieve arrays of very small size devices with gold microelectrodes of size 110 μm × 110 μm and narrow gaps of 4 μm between the electrodes capable of operating at 0 V (self-powered) and 30 V. Our UV sensor displayed the highest detectivity of 2.32 × 1012 cm . Hz1/2 . W − 1 as a flexible AlN single nanowire device under 30 V bias. Moreover, the device demonstrated a very good wavelength selectivity and a very fast response speed along with very high durability against bending testing. In short, highly responsive, flexible, very small, cost-effective, and durable AlNNW-UVPD can provide opportunities for multifunctional, portable, sensitive, wearable, and smart sensors in optoelectronics and flexible electronics.

中文翻译：

---

通过单氮化铝纳米线的高响应性柔性紫外光电探测器

首次报道了高响应性，灵活的氮化铝单纳米线紫外光电探测器（AlNNW-UVPD），其最高的响应度为1197.5 mA / W，在254 nm的UV曝光下于30 V时具有出色的584％的外部量子效率偏见。通过可扩展且具有高成本效益的热接触方法制造了非常小规模的柔性纳米级光电探测器。通过这种方法，我们能够实现尺寸非常小的设备阵列，这些设备具有尺寸为110μm×110μm的金微电极，并且能够在0 V（自供电）和30 V电压下工作的电极之间的间隙为4μm。紫外线传感器的最高探测灵敏度为2.32×1012 cm。赫兹1/2 W −作为30 V偏压下的柔性AlN单纳米线器件。而且，该设备显示出非常好的波长选择性和非常快的响应速度，以及非常高的抗弯曲测试耐久性。简而言之，高响应度，灵活，非常小巧，具有成本效益和耐用性的AlNNW-UVPD可为光电和柔性电子中的多功能，便携式，灵敏，可穿戴和智能传感器提供机会。