In the present work, SiO${}_{\mathrm{x}}$C${}_{\mathrm{y}}$H${}_{\mathrm{z}}$ coatings were prepared in capacitively coupled RF glow discharge from gaseous mixture of trimethylsilyl acetate (TMSAc) monomer and oxygen. Properties of thin solid films prepared using continuous wave (CW) plasma and pulsed wave (PW) plasma were examined, including long–term stability in contact with air and water environments. The presented study proves that it is possible to prepare organosilicon coatings showing properties in a wide range from soft organic polymeric structures to materials similar to SiO₂ with Martens hardness of 4 GPa. The content of carbon species in organosilicon structure and water contact angle (WCA) decreased with increasing oxygen ratio from 7.7 % to 75.0 %. The water contact angle of TMSAc-based coatings prepared in CW mode decreased from 95° to 76°. The application of pulsed mode using an oxygen ratio of 50 % and pulse repetition frequencies in the range of 0.33 Hz to 300 Hz led to materials with hydrophobic character (WCA in range of 86°–94°) with increased content of CH${}_{\mathrm{x}}$ and Si-CH${}_3$ structures in comparison to CW mode. This study proves that the aging mechanism significantly depends on deposition parameters. The increase of oxygen ratio, as well as the increase of pulse repetition frequency, led to the higher resistance towards the atmospheric environment. On the other side, organosilicon coatings prepared in CW mode using high oxygen ratios (50–75 %) showed significant delamination after immersion in water. However, the use of PW plasma for the preparation of SiO${}_{\mathrm{x}}$C${}_{\mathrm{y}}$H${}_{\mathrm{z}}$ thin films significantly improved the stability of resulting materials under water environment.

在目前的工作中，SiO${}_{\mathrm{X}}$C${}_{\mathrm{是}}$H${}_{\mathrm{z}}$涂层是在电容耦合射频辉光放电中由三甲基乙酸甲硅烷酯 (TMSAc) 单体和氧气的气态混合物制备的。研究了使用连续波 (CW) 等离子体和脉冲波 (PW) 等离子体制备的固体薄膜的特性，包括与空气和水环境接触的长期稳定性。所提出的研究证明，可以制备具有广泛性质的有机硅涂层，从柔软的有机聚合物结构到类似于 SiO _{2 的}材料马氏硬度为 4 GPa。随着氧比从 7.7% 增加到 75.0%，有机硅结构中碳物质的含量和水接触角 (WCA) 降低。在 CW 模式下制备的 TMSAc 基涂层的水接触角从 95° 降低到 76°。使用氧比为 50% 和脉冲重复频率在 0.33 Hz 至 300 Hz 范围内的脉冲模式的应用导致材料具有疏水性（WCA 范围为 86°–94°），CH 含量增加${}_{\mathrm{X}}$ 和Si-CH${}_3$与 CW 模式相比的结构。该研究证明，老化机制在很大程度上取决于沉积参数。氧比的增加，以及脉冲重复频率的增加，导致对大气环境的更高抵抗力。另一方面，在 CW 模式下使用高氧比（50-75%）制备的有机硅涂层在浸入水中后显示出明显的分层。然而，使用 PW 等离子体制备 SiO${}_{\mathrm{X}}$C${}_{\mathrm{是}}$H${}_{\mathrm{z}}$ 薄膜显着提高了所得材料在水环境下的稳定性。