Direct epitaxial growth of III-V light sources on Si photonic chips is promising to realize low-cost and high-functionality photonic integrated circuits. Historically, high temperature reliability of such devices has been the major roadblock due to crystalline defects from heteroepitaxy. Here, by reducing the threading dislocation densities to ${\sim}{{1}} \times {{1}}{{{0}}^6}\;{\rm{c}}{{\rm{m}}^{- 2}}$ and efficiently removing misfit dislocations above and below the active region, 1.3 µm InAs quantum-dot lasers directly grown on industry standard on-axis Si (001) show record-breaking reliability at 80°C. The hero device shows minimum degradation after more than 1200 h of constant current stress. Statistical analysis shows an extrapolated lifetime of over 22 years for the median devices, bringing these devices one big step closer to real world applications.

中文翻译：

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具有失配和螺纹位错滤光片的Si上的高温可靠量子点激光器

在Si光子芯片上直接外延生长III-V光源有望实现低成本和高功能的光子集成电路。从历史上看，由于异质外延引起的晶体缺陷，此类器件的高温可靠性一直是主要障碍。在这里，通过将线程的位错密度减小为$ {\ sim} {{1}} \ times {{1}} {{{0}} ^ 6} \; {\ rm {c}} {{\ rm {m }} ^ {-2}} $为了有效地消除有源区上方和下方的失配位错，直接在行业标准同轴Si（001）上生长的1.3 µm InAs量子点激光器在80°C时显示了创纪录的可靠性。在超过1200小时的恒定电流应力下，hero设备显示出最小的退化。统计分析显示，中值设备的推断寿命超过22年，使这些设备更接近于实际应用。