Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by ~60% with respect to GaN RF HEMTs mounted on conventional packaging.

中文翻译：

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用于超高功率GaN晶体管热管理的3-D打印Microjet冲击冷却

未来的基于GaN的射频（RF）高电子迁移率晶体管（HEMT）可以通过例如将GaN器件层与高热导率金刚石基板集成在一起来提高面积功耗。为了最大化超高功率密度电子设备的优势，需要改进的封装级冷却方法，以防止封装和散热器成为热瓶颈。我们证明，相对于安装在常规包装上的GaN RF HEMT，3-D打印聚合物微喷射液体撞击冷却可将包装水平的热阻降低约60％。