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Phonon frequencies, mechanical and optoelectronic properties for $${\mathbf{InP}}_{{\mathbf{x}}} {\mathbf{As}}_{{\mathbf{y}}} {\mathbf{Sb}}_{{1 - {\mathbf{x}} - {\mathbf{y}}}}$$ InP x As y Sb 1 - x - y /InAs alloys under the influence of pressure
Applied Physics A ( IF 2.7 ) Pub Date : 2021-05-18 , DOI: 10.1007/s00339-021-04551-4
A. R. Degheidy , A. M. AbuAli , Elkenany. B. Elkenany

The pressure dependence of electronic and optical properties for InPxAsySb1−x−y alloys lattice matched to InAs substrate has been investigated. The mechanical properties and the phonon frequencies for InPxAsySb1−xy/InAs system under the effect of pressure have been studied. The physical properties of the binary components InP, InAs and InSb that constitute the quaternary alloy were used in this analysis. The study achieved using the empirical pseudo-potential approach (EPM) under the virtual crystal approximation (VCA). Our findings were found to be in good agreement with experimental and theoretical data at p = 0 kbar. Our results may serve as reference for the future experimental values at high pressures. The pressure dependence of the fundamental properties of InPxAsySb1−xy/InAs system such as optical constants and modes of lattice vibration has not been fully studied. So, we have concentrated on these properties under the effect of pressure.



中文翻译:

$$ {\ mathbf {InP}} _ {{\ mathbf {x}}} {\ mathbf {As}} _ {{\\ mathbf {y}}} {\ mathbf {Sb} } _ {{1-{\ mathbf {x}}-{\ mathbf {y}}}} $$ InP x As y Sb 1-x-y / InAs合金在压力影响下

研究了晶格匹配InAs衬底的InP x As y Sb 1- x -y合金的电子和光学性能与压力的关系。研究了InP x As y Sb 1- x - y / InAs体系在压力作用下的力学性能和声子频率。在此分析中,使用了构成四元合金的二元组分InP,InAs和InSb的物理性质。该研究是在虚拟晶体近似(VCA)下使用经验伪势能方法(EPM)实现的。我们的发现被发现与实验和理论数据在p  = 0 kbar。我们的结果可作为将来在高压下的实验值的参考。InP x As y Sb 1− x - y / InAs系统的基本特性(如光学常数和晶格振动模式)对压力的依赖性尚未得到充分研究。因此,我们将注意力集中在压力作用下的这些特性上。

更新日期:2021-05-18
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