Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/SiO₂/Si and TiO₂-buffered Pt/Ti/SiO₂/Si substrates. Effect of thin TiO₂ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of TiO₂. The disappearance of cracks in PZT films deposited on TiO₂/Pt/Ti/SiO₂/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of TiO₂. Reduction in the leakage current density from 4.45×10⁻⁵ to 2.42×10⁻¹⁰ A/cm² is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (P_s = 45 μC/cm²) is achieved for the optimized TiO₂-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×10¹⁹ cm⁻³. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/cm². Short circuit current (I_sc) increased from 1.42 × 10⁻⁹ to 0.63 × 10⁻⁷ A with increase in the UV intensity from 2 to 24 mW/cm². However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/cm² to 24 mW/cm², respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/cm². The transient photocurrent is increased from 1.80 × 10⁻⁹ to 1.57×10⁻⁷ A with increase in the UV intensity from 2 to 24 mW/cm² at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×10⁻⁷ to 4.98×10⁻⁷ A is found with heating along with UV illumination (intensity =24 mW/cm²).

已经利用化学溶液沉积技术在Pt / Ti / SiO ₂ / Si和TiO ₂缓冲的Pt / Ti / SiO ₂ / Si衬底上生长多晶PZT厚膜。在目前的工作中，已经研究了薄的TiO ₂缓冲层对PZT膜的结构，介电和电性能的影响。使用TiO ₂缓冲层可实现多晶单相PZT厚膜。沉积在TiO ₂ / Pt / Ti / SiO ₂上的PZT膜中的裂纹消失/ Si衬底表明缓冲层作为铂进入PZT的扩散阻挡层的作用。使用TiO ₂的缓冲层，发现PZT膜的介电常数从104增加到403，而介电损耗在1MHz时从0.19减小到0.06 。对于二氧化钛缓冲层状PZT膜，泄漏电流密度从4.45×10 ^-5降低到2.42×10 ^-10 A / cm ²。优化后的TiO ₂达到了饱和极化（P _s = 45μC/ cm ²）缓冲的PZT厚膜。优化的PZT膜显示出清晰的蝴蝶环，揭示了其铁电特性。通过Mott Schottky分析确定最优化膜的自由载流子浓度，发现为4.28×10 ¹⁹ cm ^-3。使用优化的PZT厚膜制造铁电光伏器件，并在UV照射下进行UV强度从2到24 mW / cm ^2的变化进行光伏测量。 随着紫外线强度从2 mW / cm ²增加到24 mW / cm ^2，短路电流（I _sc）从1.42×10 ^-9增加到0.63×10 ^-7 A。然而，观察到开路电压（-1.7V）分别随着UV强度2 mW / cm ²到24 mW / cm ^2的增加而保持恒定。发现随着UV强度从2mW / cm ²增加，功率转换效率从0.15％增加到0.58％。对于所制造的光伏器件，在固定直流偏置电压（5V）下， UV强度从2 mW / cm ²增加到24 mW / cm ²时，瞬态光电流从1.80×10 ^-9增加到1.57×10 ^-7A。优化的制造的光伏电池对不同强度的入射紫外线的响应迅速且具有出色的稳定性。光电流从1.68×10 ^-7显着增强在 加热和UV照射（强度＝ 24mW / cm ²）的情况下，发现最大为4.98×10 ^-7A。