Russian Microelectronics Pub Date : 2021-05-17 , DOI: 10.1134/s1063739721030057 A. A. Gorelov , V. V. Lokotko , N. I. Kargin , I. S. Vasilievsky , K. S. Grishakov , R. V. Ryzhuk
Abstract
AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the frequency range from 1 to 30 GHz. The static characteristics of the device are satisfactorily described by the indicated model in the voltage range of the runoff up to 2.5 V. For the analysis of the noise characteristics, the Fukui model is used. It is found that the influence of the parasitic drain capacitance and the values of the drain and source inductances do not significantly affect the noise characteristics of the transistor, and an increase in the parasitic capacitance and a decrease in the parasitic gate inductance can lead to a significant reduction in the high-frequency noise figure.
中文翻译:
微波参数化和变质0.15 µm MHET InAlAs / InGaAs晶体管的噪声模型
摘要
在微波频率范围内研究了栅极长度为0.15μm的AlGaAs MHEMT晶体管。发现在模型中实验值和理论值之间的差异S-参数在1到30 GHz的频率范围内不超过0.5%。在高达2.5 V的径流电压范围内,所指示的模型可以令人满意地描述该设备的静态特性。为了分析噪声特性,使用了Fukui模型。结果发现,寄生漏极电容以及漏极和源极电感值的影响不会显着影响晶体管的噪声特性,并且寄生电容的增加和寄生栅极电感的减少都可能导致晶体管的噪声。大大降低了高频噪声系数。