Nanocrystalline (NC) tin dioxide (SnO₂) thin film has been prepared using chemical bath method at low working temperature onto SiO₂/Si substrates. The structural and morphological properties were studied through X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The as-deposited thin film appeared with tetragonal rutile structure. The crystallization of SnO₂ film was achieved when the film was exposed to anneal at $500^{\circ }$C. NC SnO₂ thin film was successfully utilized as an extended gate field-effect transistor (EGFET) pH sensing. NC SnO₂ film based pH-EGFET sensor displayed a notable pH sensing performance, where the sensitivity and the linearity values are equal to 25.7 (mV/pH) and 0.8489 within 2–12 range consecutive. The NC SnO₂ thin film sensor has shown good pH sensor stability and reliability; thus it can be considered the best choice for flexible and disposable biosensors.

使用化学浴法在低工作温度下将纳米晶（NC）二氧化锡（SnO ₂）薄膜制备到SiO ₂ / Si衬底上。通过X射线衍射（XRD）和场发射扫描电子显微镜（FESEM）研究了结构和形态特性。沉积的薄膜呈现出四方金红石结构。SnO ₂薄膜在50°C退火时可以实现结晶。$500^{\circ }$C. NC SnO ₂薄膜已成功地用作扩展栅场效应晶体管（EGFET）pH传感。基于NC SnO ₂薄膜的pH-EGFET传感器表现出显着的pH感测性能，其灵敏度和线性值连续2-12个范围内等于25.7（mV / pH）和0.8489。NC SnO ₂薄膜传感器显示出良好的pH传感器稳定性和可靠性。因此，它被认为是柔性和一次性生物传感器的最佳选择。