A new method of non-destructive sub-surface interfacial characterisation has been developed recently, which can be useful for quality assurance of a buried interface in nanoelectronic devices, such as magnetic random access memory. Since the cell size of these devices have been reducing their sizes, it is important to evaluate the resolution of the non-destructive imaging. A sub nanometric layer of different materials such as W and Pt was grown underneath a capping layer with controlled thickness for the evaluation of their sizes in this study. This provides systematic experimental data to show that the technique is capable to resolve down to approximately 2 nm in the plane, which is sufficient for the device imaging.

最近开发了一种非破坏性次表面界面表征的新方法，该方法可用于纳米电子器件（如磁性随机存取存储器）中埋入界面的质量保证。由于这些设备的单元尺寸一直在减小，因此评估无损成像的分辨率非常重要。在本研究中，在具有受控厚度的覆盖层下方生长了不同材料（例如 W 和 Pt）的亚纳米层，以评估它们的尺寸。这提供了系统的实验数据，表明该技术能够在平面中分辨率​​低至约 2 nm，这足以用于器件成像。