Two-dimensional transition metal chalcogenides like GeSe, GeS and SnSe are widely used in a variety of electrical and optoelectrical applications. Alloying becomes the most important tool to alter the structural, optical and electrical properties of the material. Here, efforts have been applied to grow the crystals of GeS\(_{x}\)Se\(_{1-x}\) \((x = 0,0.5,1)\) using iodine (I\(_{2})\) as a transporting agent by the chemical vapour transport technique. The elemental confirmation of grown crystals was done by the energy-dispersive analysis of X-rays. The lattice parameters were obtained from powder X-ray diffraction patterns of all the grown compounds. For the optical study of grown compounds, UV–Vis spectroscopy was performed in the wavelength range of 700–1450 nm. The optical absorption process was studied in detail using the direct and the indirect transitions from two- and three-dimensional models. Moreover, band-gap modification by incorporating sulphur in different concentrations is studied. It is found that the band gap increases with increasing sulphur content in germanium selenide crystals.

二维过渡金属硫族化物，如GeSe，GeS和SnSe，已广泛用于各种电气和光电应用中。合金化成为改变材料的结构，光学和电学性质的最重要工具。在这里，已经进行了努力来使用碘（I \（）来生长GeS \（_ {x} \） Se \（_ {1-x} \） \（（x = 0,0.5,1）\）的晶体。 _ {2}）\）通过化学气相传输技术作为传输剂。生长晶体的元素确认是通过X射线的能量色散分析完成的。从所有生长的化合物的粉末X射线衍射图获得晶格参数。为了对生长的化合物进行光学研究，在700-1450 nm的波长范围内进行了UV-Vis光谱分析。使用二维模型和三维模型的直接和间接跃迁详细研究了光吸收过程。此外，研究了通过掺入不同浓度的硫进行的带隙修饰。发现硒化锗晶体中的带隙随着硫含量的增加而增加。